Elastic Properties of Nano–Thin Films by Use of Atomic Force Acoustic Microscopy - Volume 1185

Professor of Nanoelectronics at TU Wien - ‪‪Citerat av 2 661‬‬ - ‪Nanoelectronics‬ A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber. Nano letters 12

degrees in electrical engineering from Technische Universitat Dresden, Germany, in 2008 and 2014, respectively. From 2008 to 2011, he worked on the fabrication and characterization of nanowire devices with the Namlab gGmbH, Dresden. ‪NaMLab, TU Dresden‬ - ‪‪Cited by 1,034‬‬ - ‪Nanoelectronics‬ The following articles are merged in Scholar. Their combined citations are counted only for the first article. André Heinzig Walter M. Weber In this work, we investigate the temperature dependence of electrical switching properties of back-gated, undoped Si-nanowire field-effect transistors with Ni Die TU Dresden wird auf Grundlage des vom Sächsischen Landtag beschlossenen Haushalts aus Steuermitteln mitfinanziert. André Heinzig.

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697–702, 2015. Sie sind hier. Startseite » Volleyball » Herren » 2. Herren.

Christian Mayr Professor, Chair for Nanoelectronic Materials, TU Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany Center for Advancing Electronics Dresden (CfAED), TU Dresden, 01062 Dresden, Germany Search for more papers by this author Sayanti Banerjee, Uwe Muehle, Markus Löffler, Andre Heinzig, Jens Trommer, Ehrenfried Zschech, "Preparation and characterization of silicon nanowires using SEM/FIB and TEM: Paper presented at “XV International Conference on Electron Microscopy”, 15–18 September 2014, Cracow, Poland", In International Journal of Materials Research, Carl André Heinzig. Chair of Nanoelectronic Materials, TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, Germany.

Reference. Dominik Martin, Andre Heinzig, Matthias Grube, Lutz Geelhaar, Thomas Mikolajick, Henning Riechert, Walter M Weber, "Direct probing of Schottky barriers in

697 Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation.

Andre Wachowiak. NaMLab gGmbH Nöthnitzer Straße 64, 01187 Dresden, Germany. Search for more papers by this author. André Heinzig. NaMLab gGmbH, Nöthnitzer Straße 64, 01187 Dresden, Germany. Chair for Nanoelectronic Materials, TU Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany. Center for Advancing Electronics Dresden (CfAED

Verified email at alumni.tu-berlin.de WM Weber, A Heinzig, J Trommer, D Martin, M Grube, T Mikolajick. Solid-State Electronics 102, Professor for Nanoanalysis, Technische Universität Dresden - ‪‪Cited by 6263‬‬ - ‪ Materials Science‬ - ‪Materials Analysis‬ - ‪Solid State Physics‬ NaMLab, TU Dresden - ‪‪Cited by 1011‬‬ - ‪Nanoelectronics‬ André Heinzig. NaMLab, TU A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber. 19.
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156 13 Vetter 3187 44 Heinzig Sebastian GER M JA Leipzig 13712 02:14:25. 3188 350 Dr.-Ing. André Heinzig: andre.heinzig: 463-39129: Dipl.-Ing. (FH) André Hiess: andre.hiess: 463-36407: Dr. rer. nat.

However, the electric conduction mechanism and the scaling properties underlying André Heinzig NaMLab, TU Dresden Verified email at namlab.com. Tony Schenk Principal Special Project Process / Device Engineer at Ferroelectric Memory Company Verified email at ferroelectric-memory.com.
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‪Scientific Director, NaMLab GmbH and Professor for nanoelectronic materials, TU Dresden‬ - ‪‪Cited by 14,779‬‬ - ‪semiconductor materials and devices‬ - ‪nonvolatile memory‬ - ‪microelectronics‬ - ‪ferroelectrics‬ - ‪GaN‬

These combine p- and n-type field effect transistors (FETs) to reduce static power consumption. However, CMOS transistors are limited to static electrical functions, i.e., electrical characteristics that cannot be changed.

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Thomas Mikolajick's Lab: NaMLab and TU Dresden. Institution: Technische Universität Dresden. Department: Institute of Semiconductors and Microsystems. Overview. Featured projects (1)

22 April 2021. Girls' Day 2021: Faszination Smartphone – Mikroskopie miterlebt. 30 June to 09 July 2021. Publications.

Andre Wachowiak. André Heinzig [] Walter M. Weber. In this work, we investigate the temperature dependence of electrical switching properties of back-gated, undoped Si-nanowire André Heinzig.

Their combined citations are counted only for the first article. André Heinzig Walter M. Weber In this work, we investigate the temperature dependence of electrical switching properties of back-gated, undoped Si-nanowire field-effect transistors with Ni Die TU Dresden wird auf Grundlage des vom Sächsischen Landtag beschlossenen Haushalts aus Steuermitteln mitfinanziert. André Heinzig. Institute of Semiconductor and Microsystems, TU Dresden, 01187 Dresden, Germany. TU Dresden, 01062 Dresden, Germany.

Chair of Nanoelectronic Materials, TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, Germany. Namlab gGmbH, Noethnitzer Strasse 64, 01187 Dresden Namlab gGmbH, Nӧthnitzer Strasse 64, 01187 Dresden, Germany. Center for Advancing Electronics Dresden (‘CfAED’), TU Dresden, 01062 Dresden, Germany. André Heinzig Moved Permanently. The document has moved here. According to CS-rankings, he is one of the most published Professor in top conferences at TU Dresden in Computer Science. The DBLP profile can be found at this link .